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Each NAND flash cell is essentially a modified transistor, specifically a MOSFET (metal-oxide-semiconductor field-effect transistor) with an additional “floating gate” or, in modern 3D NAND, a charge trap layer. This isolated structure is sandwiched between insulating layers of oxide, allowing it to trap and retain electrical charge (electrons) even when power is off.

package com.example.mykuikly.proto;// 确保包名与配置匹配

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“When he was talking about the risks of AI, he contorted,” says the investor. “His body twisted. He was really emotionally showing how scared he was.”